PART |
Description |
Maker |
APT10M19BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 100V 75A 0.019 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
|
HUF75345S3S HUF75345P3 HUF75345G3 FN4365 |
75A/ 55V/ 0.007 Ohm/ N-Channel UltraFET Power MOSFETs 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
RJK1028DSP-00-J5 |
100V, 3A, 165m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK1054DPB-00-J5 |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
HUFA75345G3 HUFA75345P3 HUFA75345S3S HUFA75345S3ST |
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)) N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)4A条的Rds(on):0.070Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00V的,身份证(续)4A条的Rds(on.070Ω))
|
SEMELAB LTD Electronic Theatre Controls, Inc. TE Connectivity, Ltd. Semelab(Magnatec) SEME-LAB[Seme LAB]
|
IXTQ160N10T IXTH160N10T |
Preliminary Technical Information TrenchMVTM Power MOSFET 160 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS Corporation
|